In the present work, indium sulfide In2S3 thin films were grown on amorphous glass substrate by the chemical spray pyrolysis technique .The different molar ratio of In2S3 powder and thiocyanate ( 0.05,0.1,0.15) M used to grow In2S3 nanostructure with160nm thickness on the glass substrate under 310 Co temperature. Thickness of the films were measured by optical interferometer method. Structural properties were examined using X-Ra diffraction analysis is revealed that all the films were polycrystalline in nature with a dominant 0021peak which indicates that the In2S3 nanostructures are cubic phases. The evaluated crystallite size varied in the range 67.64-81.82nm with the increase of molarity. SEM analysis revealed that all The films have no voids and cracks. Optical properties of the grown films showed that the direct band gap values were found to decrease in the range 3.1-2.75eV which are means that it has the possibility of using indium sulfide in the manufacture of optoelectronic devices. Electrical properties using Hall effect measurement showed that all films N_type semiconductor. the conductivity for all films decreases with increasing of molarity. Results indicates the possibility of using indium sulfide in the manufacturing of detector or a gas sensor.
Keywords: _Indium Sulfide, Chemical Spray Pyrolysis Technique, Band Gap Energy , Absorption Coefficient, Hall Effective , X-Ray, AFM_